EM/Circuit Co-Simulation: A Highly Accurate Method for Microwave Amplifier Design
نویسنده
چکیده
This paper features a radical and highly accurate method of designing a microwave amplifier. A Full-wave Electromagnetic Simulator, which is based on the Methodof-Moments (MoM) numerical method, is used in parallel with the conventional microwave circuit simulator to demonstrate a superior performance outcome such as Stability, Return Loss and Small Signal Gain. This method known as EM/Circuit Co-Simulation guarantees a design that work with the first PCB and concurrently multiple PCB layouts are avoided, which saves design cost and development time respectively. The method is methodically demonstrated with the design of power amplifier (PA) based on E-pHEMT technology for IEEE 802.16e Mobile WiMAX applications.
منابع مشابه
Better Predictions of Microwave Amplifier Small Signal Performances with FEM Simulator
This paper provides an alternative and highly accurate method in predicting Small Signal Performance of Microwave Amplifier. An Electromagnetic (EM) simulator that based on Finite Element Method (FEM) was used in combination with the conventional SPICE-based microwave circuit simulator in order to demonstrate the superiority in performance outcome such as Rollet Stability Factor (K), Return Los...
متن کاملA W-band Simultaneously Matched Power and Noise Low Noise Amplifier Using CMOS 0.13µm
A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...
متن کاملNon-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application
A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...
متن کاملDe-Embedding Method Using EM Simulator for Characterization of FETs and Its Applicability to Lossy Substrates
Accurate characterization of field effect transistors (FETs) is necessary for accurate design of monolithic-microwave integrated-circuit (MMIC). Extraction of FET parameters is difficult because the FET is embedded in the parasitic circuit, which is referred to as test element group (TEG), as shown in Fig.1 to connect probe and biases. De-embedding method using open/shortTEG [1] had been widely...
متن کاملUltra-Widband Distributed Amplifier Using Loss Compensation Technique on Both Input and Output Circuit
In this paper, we analyze a distributed amplifier based on input/output attenuation compensation. The analysis is carried out for a HEMT transistor; and a constant-k section filter is used to calculate the amplifier’s characteristics such as attenuation factor, phase constant and gain. The proposed design approach enables us to examine the tradeoff among the variables, which include the type an...
متن کامل